Model 1080
PicoMill® TEM specimen preparation system
Combines an ultra-low energy, inert gas ion source and a scanning electron column with multiple detectors to yield optimal TEM specimens.
Focused ion beam (FIB) milling is a widely used technique for today’s cutting-edge materials that provides a means to prepare transmission electron microscopy (TEM) specimens. The challenge in working with these advanced materials is to create specimens that are electron transparent and are free from artifacts.
The FIB is highly effective in preparing TEM specimens, but the use of a high-energy, liquid metal ion source can often result in specimen amorphization, gallium implantation, or both.
The PicoMill system is the ideal complement to FIB technology; it adds the increased capability of producing optimal specimen quality while enhancing the overall specimen preparation throughput by moving final thinning offline.
- Achieve ultimate specimen quality – free from amorphous and implanted layers
- Complements FIB technology
- Milling without introduction of artifacts
- Advanced detector technology
- In situ imaging with ions and electrons
- Microscope connectivity for risk-free specimen handling
- Adds capability and capacity
- Fast, reliable, and easy to use
Argon milling of bulk and post-FIB specimens for multi-length scale analyses by EBSD, TEM, and APT under controlled environment
Bulk Mg ribbons were prepared using a broad Ar ion beam milling system for the removal of surface artifacts. The bulk sample was then transferred under a protected environment to a FIB system for imaging and EBSD analysis. FIB specimen preparation of the APT specimens followed by concentrated Ar ion beam milling...
Artifact-free preparation of plan view TEM specimens and its application to MRAM devices
We describe post-FIB Ar concentrated ion beam milling preparation of plan view TEM specimens; neither mechanical treatment nor the addition of a protective block before FIB preparation are necessary. We apply this novel, controlled, and artifact-free plan view TEM specimen preparation method to a fully fabricated...
High throughput and multiple length scale sample preparation for characterization and failure analysis of advanced semiconductor dev...
Failure analysis of advanced semiconductor devices demands fast and accurate examination from the bulk to the specific area of the defect. Consequently, nanometer resolution and below is critical for finding defects. This work presents the use of argon ion milling methods for multiple-length scale sample preparation...
Ion milling of ex situ lift-out FIB specimens
The semiconductor industry is constantly investigating new methods that can improve both the quality of TEM lamella and the speed at which they can be created. To improve throughput, a combination of FIB-based preparation and ex situ lift-out (EXLO) techniques have been used. Unfortunately, the carbon support on the...
Large field of view and artifact-free plan view TEM specimen preparation by post-FIB Ar milling
Semiconductor devices are decreasing in dimensions and currently comprise stacks of ultrathin layers as in a spin-transfer torque magnetoresistive random-access memory (STTM-RAM) device. For successful characterization by transmission electron microscopy for failure analysis and device development, an accurate and...
Narrow-beam argon ion milling of ex situ lift-out FIB specimens mounted on various carbon-supported grids
The semiconductor industry recently has been investigating new specimen preparation methods that can improve throughput while maintaining quality. The result has been a combination of focused ion beam (FIB) preparation and ex situ lift-out (EXLO) techniques. Unfortunately, the carbon support on the EXLO grid...
Post-FIB cleaning of TEM specimens from 14 nm and other finFETs by concentrated argon ion milling
Specimen thickness of 20 nm or less is required to characterize the 3D structures of the 14 nm node FinFET gate oxide in the TEM.[6] Consequently, fast and reproducible TEM specimen preparation is essential. TEM specimens are usually prepared using a focused ion beam (FIB) tool due to the site specificity and...
Precise final thinning by concentrated Ar ion beam milling of plan view TEM specimens from phase change memory device prepared in Xe...
Advanced memory technologies are in demand with phase change memory devices as a forefront candidate. For successful characterization by TEM for failure analysis and device development, an accurate and controllable thinning of TEM specimens is critical. In this work, TEM specimens from a GeTe-based PCM device at a...
Raman spectroscopy and electron microscopy studies of Ga FIB and post-FIB Ar ion milling's impact on Si TEM specimens
Raman spectroscopy is used to characterize not only the amorphous damage layers but also a residual strain on Si specimens prepared by Ga FIB and post-FIB Ar ion milling. Raman spectroscopy is a nondestructive characterization technique that is receptive to crystal quality, residual strain, and doping concentrations...