A fully integrated solution for millimeter-scale delayering of logic and memory semiconductor devices. The result is a highly planar surface—up to 10 mm in diameter with a uniformity of better than 50 nm.
An ex-service hydrogen reformer tube composed of Fe-0.45% C-25% Cr-35% Ni-1.0% Si-1.5% Nb-1.0% Mn (approximate wt.%) was examined via serial sectioning and 3D reconstruction to characterize creep voids in terms of their size, location, and surrounding precipitates. In addition, electron backscatter diffraction...
This paper reports on the substantial improvement of specimen quality by use of a low voltage (0.05 to ~1 keV), small diameter (~1 µm), argon ion beam following initial preparation using conventional broad-beam ion milling or focused ion beam. The specimens show significant reductions in the amorphous layer...
Top-down delayering, which is a widely used failure analysis (FA) and quality control technique, is very challenging. The primary challenges are looking through many dissimilar nanoscale layers and attempting to investigate different layers simultaneously. We present a semiconductor device investigation development...
We discuss advances in semiconductor device deprocessing for product development, failure analysis, and quality control using low-energy, argon broad ion beam (BIB) milling. A unique, automated technique for Ar broad ion beam milling of whole 300 mm wafers is contrasted with tabletop Ar broad ion beam milling...
Using high-angle-annular-dark-field (HAADF) scanning-transmission-electron microscopy (STEM), we have investigated n-precipitates in the Al-Zn-Mg-Cu (AA7050) aluminum alloy.
As semiconductor device sizes continue to decrease, the degree of accuracy needed for electron microscopy and microanalysis of such materials increases. To achieve such accuracy, small electron probes with high beam currents are needed. The combination of these two factors results in an increase in the amount of...
Bulk Mg ribbons were prepared using a broad Ar ion beam milling system for the removal of surface artifacts. The bulk sample was then transferred under a protected environment to a FIB system for imaging and EBSD analysis. FIB specimen preparation of the APT specimens followed by concentrated Ar ion beam milling...
We describe post-FIB Ar concentrated ion beam milling preparation of plan view TEM specimens; neither mechanical treatment nor the addition of a protective block before FIB preparation are necessary. We apply this novel, controlled, and artifact-free plan view TEM specimen preparation method to a fully fabricated...
Through a combination of aberration-corrected high-resolution scanning transmission electron microscopy and three-dimensional atom probe tomography, the true atomic-scale structure and change in chemical composition across the complex order-disorder interface in a metallic alloy has been determined...
Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental...
A specimen holder and a polishing unit with an automatic shutoff were designed for thinning disks taken from preselected areas of large metallic specimens or from specimens with small cross sectional areas. Since the disk precisely fits the specimen holder of the microscope, a supporting grid is unnecessary and...